Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules

Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules

碩士 === 國立清華大學 === 工程與系統科學系 === 101

Bibliographic Details
Main Author:	楊宗翰
Other Authors:	歐陽汎怡
Format:	Others
Language:	en_US
Published:	2013
Online Access:	http://ndltd.ncl.edu.tw/handle/44843590268650273775

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