Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules

碩士 === 國立清華大學 === 工程與系統科學系 === 101

Bibliographic Details
Main Author: 楊宗翰
Other Authors: 歐陽汎怡
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/44843590268650273775
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spelling ndltd-TW-101NTHU55930682015-10-13T22:29:57Z http://ndltd.ncl.edu.tw/handle/44843590268650273775 Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules 絕緣閘雙極性電晶體模組中之銅-鋁楔型打線在電遷移實驗下之破壞機制 楊宗翰 碩士 國立清華大學 工程與系統科學系 101 歐陽汎怡 2013 學位論文 ; thesis 126 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 工程與系統科學系 === 101
author2 歐陽汎怡
author_facet 歐陽汎怡
楊宗翰
author 楊宗翰
spellingShingle 楊宗翰
Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules
author_sort 楊宗翰
title Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules
title_short Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules
title_full Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules
title_fullStr Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules
title_full_unstemmed Failure mechanisms of Cu-Al wedge bonding under electromigration test in insulated-gate bipolar transistor (IGBT) modules
title_sort failure mechanisms of cu-al wedge bonding under electromigration test in insulated-gate bipolar transistor (igbt) modules
publishDate 2013
url http://ndltd.ncl.edu.tw/handle/44843590268650273775
work_keys_str_mv AT yángzōnghàn failuremechanismsofcualwedgebondingunderelectromigrationtestininsulatedgatebipolartransistorigbtmodules
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