Fabrication of High-Performance Ge MOS Devices by Integrating Novel Surface Passivation and Crystalline High-κ Gate Dielectric

博士 === 國立清華大學 === 工程與系統科學系 === 101 === This thesis focuses on the the process fully compatible with incumbent ultra-large-scale integration (ULSI) technology, and hence, providing an economic way of fabricating high-performance Ge MOSFETs without using a Ge substrate and how to solve issues on Ge bu...

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Bibliographic Details
Main Authors: Wu, Min-Lin, 吳旻霖
Other Authors: Wu, Yung-Hsien
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/78743735050056553686