Fabrication of High-Performance Ge MOS Devices by Integrating Novel Surface Passivation and Crystalline High-κ Gate Dielectric
博士 === 國立清華大學 === 工程與系統科學系 === 101 === This thesis focuses on the the process fully compatible with incumbent ultra-large-scale integration (ULSI) technology, and hence, providing an economic way of fabricating high-performance Ge MOSFETs without using a Ge substrate and how to solve issues on Ge bu...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/78743735050056553686 |