Impact of Dielectric and Electrode Materials on ZrTiOx-based Resistive RAM (RRAM)
碩士 === 國立清華大學 === 工程與系統科學系 === 101 === As the progress of electrical products, the traditional memories can’t match these products anymore. Therefore, many the new generation memory device candidates are proposed, and resistive random access memory (RRAM) is one of them. The advantages of RRAM are s...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/91854030682908031184 |