X-Ray Surface Diffraction Studies of Nanometer Silicon Wires

• Main Authors: Chu, Pei-Tzu, 朱培慈
• Other Authors: Chang, Shih-Lin
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/44133071411581345556

碩士 === 國立清華大學 === 物理系 === 101 === This work aims to allow wide-angle X-rays to incident into nanometer silicon wires at the photon energy 8.8785keV. Nanometer silicon wires were prepared on a [0 0 1] silicon wafer with 3μm high, 5mm long along [1 1 0] direction, 450nm to 20μm wide. The major results of the diffraction experiments may be summarized as follows. First, we can get four peaks in vertical 2θ -scan, which are Si (1 1 3), specular reflection of Si (1 1 3), the peak due to nano-wire and its specular reflection. And the peak due to nano-wire and its specular reflection get closer and merge together when the rotation angle of sample φ increases. Only Si (1 1 3) and specular reflection of Si (1 1 3) left whenφ increase to 20°. Second, the results of different enery and φ can achieve the same effect. Finally, there are three peaks in horizontal β -scan which are Si (1 1 3), Si(1 1 3) reflected by nano-wire, and the unexplained peak. As increasing φ , Si(1 1 3) wanders off into the relation 0.57, and the angle between Si (1 1 3) and its reflection of nano-wire has the following relationship 0.86.