X-Ray Surface Diffraction Studies of Nanometer Silicon Wires
碩士 === 國立清華大學 === 物理系 === 101 === This work aims to allow wide-angle X-rays to incident into nanometer silicon wires at the photon energy 8.8785keV. Nanometer silicon wires were prepared on a [0 0 1] silicon wafer with 3μm high, 5mm long along [1 1 0] direction, 450nm to 20μm wide. The major result...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44133071411581345556 |