Atomic Layer Deposition of HfO2 Materials for Resistive Random Access Memory Improvement and Application
博士 === 國立清華大學 === 材料科學工程學系 === 101 === In this thesis, we focus on HfO2-based resistive random access memory (RRAM) researches in improvement and application. All the RRAM devices using HfO2 as a main material are prepared by the atomic-layer-deposition (ALD) technique with remote-plasma system....
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74180296590553331559 |