| Summary: | 碩士 === 國立中山大學 === 通訊工程研究所 === 101 === Due to the fast development of the microwave circuits, the circuit design relies on good and accurate model. The research focused on the nonlinear characteristics of the MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) operated under the large signal operating condition. The traditional models only describe the performances at saturation. However, the breakdown characteristics of the MOSFETs in the avalanche breakdown region are not addressed. The presented large signal model could describe the performances of the MOSFET from saturation to breakdown region. In addition, the gate length dependence on the device performances is investigated in the same technology. Finally, this research uses spectrum and waveform measurement to verify the presented large signal model, and the nonlinear sources are analyzed by using Volterra series.
The device under test (DUT) used in this research are three different gate length MOSFETs. The gate lengths are 0.18μm、0.34μm and 0.50μm, and the fingers are 15、20 and 30. This content is composed of three parts. The first part devotes to the introduction of the purpose of different gate length and the methods of conventional large signal model establishment. The second part is to introduce the method for constructing the small and large signal model. The third part is to verify the large signal model with different gate lengths and to analyze the nonlinear characteristics under the large signal operating condition.
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