Large Signal Model Establishment for different gate length Mental-Oxide Semiconductor Field-Effect Transistor and its Characterization
碩士 === 國立中山大學 === 通訊工程研究所 === 101 === Due to the fast development of the microwave circuits, the circuit design relies on good and accurate model. The research focused on the nonlinear characteristics of the MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) operated under the large signal o...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/17517856643988585387 |