Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE
碩士 === 國立中山大學 === 物理學系研究所 === 101 === We have grown InGaN/GaN quantum wells (QWs) by plasma-assisted molecular beam epitaxy(PA MBE) for the application light-emitting diodes (LEDs). In order to evaluate the optical property of the QWs, we applied photoluminescence measurement on the samples in room...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89630308728956341228 |