Graphene growth on 6H-SiC(0001)
碩士 === 國立中山大學 === 物理學系研究所 === 101 === The method of growing grapheme by SiC has been studied for a long time. The production is affected by several factors, including growth temperature, rate of raising temperature, hold time, degree of vacuum, pressure of scheme during graphitization, and quality o...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61973870271772931463 |