| Summary: | 碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 101 === In this study, epitaxial LiGaO2 films were grown on Si(100) substrate by chemical vapor deposition(CVD) method using Gallium acetylacetonate and Lithium acetate(CH3COOLi) as gallium and lithium precursor. This dissertation is divided into three parts. In the first part, the growth of LiGaO2 films on various temperatures was investigated. In the second par, the growth of LiGaO2 films on various pressures was investigated. In the third part, the growth of LiGaO2 films on various flows of oxygen was investigated.
In the first part of dissertation, [100] orientation LiGaO2 films were grown. As revealed by XRD, for high temperature, the grown LiGaO2 films on Si substrate have better crystallinity. But as temperature increases above 950℃, the crystallinity decrease.
In the second part, we disscuss the difference of LiGaO2 films by varying the growth pressure. The stripe-like LiGaO2(100) films were obtained at lower pressure(50~150 torr), as revealed by XRD and SEM. At higher pressure(200 torr), the surface morphology display granule, as revealed by SEM.
In the third part, LiGaO2 films were deposited with different O2 flow rates(fixed total flow rate). At low oxygen flow rates(300 ~400 sccm), it was clearly visible that there is a large amount of surface defects(pits). Such defects decrease as the O2 flow increase as revealed by SEM. When O2 flow rate was above 600 sccm, the LiGa5O8 phase formed in the deposited film.
The surface composition of the deposited film is determined to be lithium, oxygen and gallium by X ray photoelectron energy spectrum. The binding energy of Li 1s, O 1s and Ga 3d is 56.1 eV, 530.1 eV and 19.2 eV respectively.
|
|---|
