Growth of LiGaO2 Films on Si(100) Substrates by Chemical Vapor Deposition
碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 101 === In this study, epitaxial LiGaO2 films were grown on Si(100) substrate by chemical vapor deposition(CVD) method using Gallium acetylacetonate and Lithium acetate(CH3COOLi) as gallium and lithium precursor. This dissertation is divided into three parts. In th...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/85629471200698794620 |