Study on the effects of N-GaN Superlattice layer growth temperature for Light Emitting Diodes
碩士 === 南開科技大學 === 電子工程研究所 === 101 === In this study, metal-organic chemical vapor deposition (Metal-Organic Chemical Vapor Deposition, MOCVD) method GaN structure, graphical sapphire substrate (PSS) is deposited on the growth of Blu-ray epitaxy light-emitting diodes (Light Emitting Diode; LED). Proc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27905307196355992502 |