Research of Graphene-Oxide-Based Flexible Resistive Switching Memory Fabricated by Spin-Coated Method

• Main Authors: Nian-Cin Lin, 林念親
• Other Authors: Chun-Chieh Lin
• Format: Others
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/46456761397001704315

碩士 === 國立東華大學 === 電機工程學系 === 101 === This thesis is divided into four chapters. The first chapter introduces the background, motivation, characteristic of graphene oxide, and operation of resistive random access memory. The second chapter is the experimental procedures, including the describing of experimental instruments, and electrical measurement methods. The third chapter discusses the physical analyses and electrical analyses of the samples fabricated on both silicon and flexible substrates. Then, bending tests were performed on the flexible sample, and a possible resistive switching model is proposed. Finally,the improvement on the graphene-oxide-based devices fabricated by dripping and spin coating methods are proposed. The last chapter is a conclusion of the characteristics and the improvement of the flexible devices. In this study, the graphene-oxide-based resistive random access memory was fabricated on both silicon and flexible substrates by spin coating method. The device performs bipolar resistive switching characteristics. For electrical measurements of the samples bending and after bending, the currents of high resistance state increase and become more stable.The retention time is over 10^5 seconds for flexible samples. For the second bending test, the currents of the high resistance state increase again slightly. We infer that bending stress generates some defects, which makes the conductive filaments formed easily. That is why the device become stable. Based on the experimental results, the flexible graphene-oxide-based resistive random access memory has considerable potential in flexible electronics in the future.