Research of Graphene-Oxide-Based Flexible Resistive Switching Memory Fabricated by Spin-Coated Method
碩士 === 國立東華大學 === 電機工程學系 === 101 === This thesis is divided into four chapters. The first chapter introduces the background, motivation, characteristic of graphene oxide, and operation of resistive random access memory. The second chapter is the experimental procedures, including the describing of...
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| Format: | Others |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46456761397001704315 |