Langmuir probe and OES diagnostic study of ECR plasma for amorphous silicon deposition process
碩士 === 國立中央大學 === 光機電工程研究所 === 101 === Optical emission spectroscopy (OES) and homemade Langmuir probe are used for in-situ diagnosing the mixed H2-SiH4-Ar plasma characteristics in an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system for hydrogenated amorphous silicon (a-Si:H)...
Main Authors: | Guan-Min Juan, 阮冠閔 |
---|---|
Other Authors: | Tomi Li |
Format: | Others |
Language: | zh-TW |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/76298976637217918622 |
Similar Items
-
Langmuir Probe Diagnostics with Optical Emission Spectrometry (OES) for Coaxial Line Microwave Plasma
by: Chi Chen, et al.
Published: (2020-11-01) -
Using OES to analyze the hydrogenated silicon oxide film ECR-CVD process for solar cell
by: Yu-Lin Hsieh, et al.
Published: (2012) -
Design and Simulation of Langmuir Probe in Plasma Diagnostic System
by: Wen-Chieh Li, et al.
Published: (2002) -
Langmuir Probe Plasma Diagnostic System With RF Compensation
by: Chang, Ching-Yen, et al.
Published: (1998) -
Langmuir Probe Technique for Plasma Characterization during Pulsed Laser Deposition Process
by: Stefan Andrei Irimiciuc, et al.
Published: (2021-06-01)