C/V band Fully Integrated Silicon-based Wideband Power Amplifiers
碩士 === 國立中央大學 === 電機工程學系 === 101 === Both the C-band and V-band fully integrated silicon-based power amplifiers are designed in the thesis, using 0.18 m and 90 nm CMOS processes by tsmcTM, respectively. In the first part, reactance compensation network is adopted for the circuit design for wideband...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46921727359357889385 |