Device Development and Analysis of P-Channel Sb-based Heterojunction Field-Effect Transistors
碩士 === 國立中央大學 === 電機工程學系 === 101 === Sb-based materials have demonstrated high potential for high-speed logic and digital electronics due to their highest electron and hole mobilities among compound semiconductors. Added by their low-power consumption, complementary circuit devices can thus be reali...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99238510414481980351 |