Role of strain in the solid phase epitaxial regrowth of dopant and isovalent impurities co-doped silicon
碩士 === 國立中央大學 === 物理學系 === 101 === Generalized Fermi-level Shifting (GFLS) model is one of the most highly developed models describing the dopant enhanced solid phase epitaxial regrowth (SPER) rate. It has been reported that SPER in doped silicon will have a rate enhancement or retardation due to th...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/y2zr98 |