The Research of Three-Dimensional Multi-bit Vertical Resistive-Switching Random Access Memory
碩士 === 國立中央大學 === 化學工程與材料工程學系 === 101 === The essential structure of resistive-switching random access memory (RRAM) could be fabricated on capacitor-like metal/insulator/semiconductor (MIS) or metal/insulator/metal (MIM) stack. The simple structure is promising for development of high density non...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29489252733244845020 |