The study on vertical-channel oxide-based thin film transistors
碩士 === 國立交通大學 === 顯示科技研究所 === 101 === We had successfully realized vertical-channel amorphous IGZO thin film transistors with submicron channel length (500nm). The device performance of the fabricated V-TFT was evaluated with the characteristics of Ion/Ioff current ratio greater than 106. The so...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/yp5k2c |