Study on non-polar a-plane GaN-based photonic crystal high Q light emitters.
碩士 === 國立交通大學 === 顯示科技研究所 === 101 === In this thesis, we have demonstrated non-polar GaN-based photonic crystal band-edge light emitters and H2 defect high Q cavity. Their optical characteristic were also measured and analyzed. For the band-edge light emitters, the AlN layer was used to be low index...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58374957506580331727 |