Study of novel epitaxial structures for GaN-based light emitting devices
博士 === 國立交通大學 === 光電工程學系 === 101 === In the past, with the developments and requirements of the solid-state lighting, the study of the wide bandgap III-nitrides semiconductors recently become a popular investigated topic. However, unavoidable issues existed during the heteroepitaxial growth of III-n...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48851928881007778798 |