The Novel V-groove Packaging Design and Electrical Test of AlGaN/GaN Power HEMT
碩士 === 國立交通大學 === 機械工程學系 === 101 === AlGaN/GaN High electron mobility transistor(AlGaN/GaN HEMT) has many attractive material properties, such as wide bandgap(about 3.4 eV), high breakdown voltage, high critical breakdown field and high saturation electric drift velocity, high peak electron velocity...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46976583983854968400 |