Interconnect and Aging-aware Statistical Soft-Error-Rate Analysis for Nano-Scaled CMOS Designs
碩士 === 國立交通大學 === 電信工程研究所 === 101 === Aging and interconnect as well as soft errors have become the three most critical reliability issues for nano-scaled CMOS designs. In this work, the aging effect due to negative bias temperature instability (NBTI) is first analyzed on cells using a 45nm CMOS tec...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/64936843238487248906 |