Interconnect and Aging-aware Statistical Soft-Error-Rate Analysis for Nano-Scaled CMOS Designs

碩士 === 國立交通大學 === 電信工程研究所 === 101 === Aging and interconnect as well as soft errors have become the three most critical reliability issues for nano-scaled CMOS designs. In this work, the aging effect due to negative bias temperature instability (NBTI) is first analyzed on cells using a 45nm CMOS tec...

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Bibliographic Details
Main Authors: Lin, Yu-Hsuan, 林玗璇
Other Authors: Wen, Hung-Pin
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/64936843238487248906