Multi gate FET random dopant fluctuation and nanogap field emission
博士 === 國立交通大學 === 電信工程研究所 === 101 === As the gate length of a metal oxide semiconductor field effect transistor (MOSFET) decreases below 32 nm, vertical channel transistors have attracted much attention because of their many interesting characteristics. Full realization of their characteristics bene...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97778040619878626154 |