The Photo-capacitance Induced by Carrier Transfer between Deep Levels and Quantum Dots
碩士 === 國立交通大學 === 電子物理系所 === 101 === The electrical and optical properties of 2.34ML、3.3ML quantum dots (QDs) samples and GaAs bulk sample are studied using the photo-capacitance measurements. First of all, we discuss the mechanism of the photo-capacitance illuminated by near-infrared light source....
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44884272022849598738 |