Impacts of Boron Doping on MILC Growth of Si-NCs SONOS Memory and Device Property
碩士 === 國立交通大學 === 電子物理系所 === 101 === Metal Induced Lateral Crystallization (MILC) technique has been purposed due to metal can be used to cause crystallization at controlled locations with low temperature. In 1992 Hayzelden et al. found nickel shows two advantages. One is fast migration property. Th...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33290153913206556929 |