Optical Properties of the Intermediate Band in Highly Mismatched ZnTeO Semiconductors

Optical Properties of the Intermediate Band in Highly Mismatched ZnTeO Semiconductors

碩士 === 國立交通大學 === 電子物理系所 === 101 === Optical properties of the highly mismatched ZnTeO semiconductors (O = 0.43, 0. 77, and 1.09 %) grown on ZnTe substrates by molecular beam epitaxy were studied using photoluminescence (PL) and time-resolved PL spectroscopy. The carrier localization caused by O clu...

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Bibliographic Details
Main Authors:	Tasi, Ming-Jui, 蔡明叡
Other Authors:	Chou, Wu-Ching
Format:	Others
Language:	en_US
Published:	2013
Online Access:	http://ndltd.ncl.edu.tw/handle/59294679879464410036

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