Optical Properties of the Intermediate Band in Highly Mismatched ZnTeO Semiconductors
碩士 === 國立交通大學 === 電子物理系所 === 101 === Optical properties of the highly mismatched ZnTeO semiconductors (O = 0.43, 0. 77, and 1.09 %) grown on ZnTe substrates by molecular beam epitaxy were studied using photoluminescence (PL) and time-resolved PL spectroscopy. The carrier localization caused by O clu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59294679879464410036 |