Optical Properties of the Intermediate Band in Highly Mismatched ZnTeO Semiconductors

• Main Authors: Tasi, Ming-Jui, 蔡明叡
• Other Authors: Chou, Wu-Ching
• Format: Others
• Language: en_US
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/59294679879464410036

碩士 === 國立交通大學 === 電子物理系所 === 101 === Optical properties of the highly mismatched ZnTeO semiconductors (O = 0.43, 0. 77, and 1.09 %) grown on ZnTe substrates by molecular beam epitaxy were studied using photoluminescence (PL) and time-resolved PL spectroscopy. The carrier localization caused by O clustering or alloy fluctuations dominates the entire PL spectra and results in multi-peak structures. As the O concentration increases, the PL emissions shift toward lower energies. These experimental results correlate well with the lower (E-) conduction subband, resulting from the anticrossing interaction between the O defects and the extended conduction states of ZnTe. Additionally, the PL lifetime of ZnTe1-xOx increases with increasing O contents and the decay curves exhibit complex behavior. The decay dynamics is clarified by using different excitation energy and temperature-dependent measurements.