Characterizations of Amorphous InGaZnO Thin Film Transistors Using High-k ZrO2 and HfO2 Dielectrics
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 101 === Recently, thin-film transistors (TFTs) have been attracted much attention. We have investigated the performance oxide thin film transistors with an amorphous indium gallium zinc oxide (-IGZO) channel and ZrO2/HfO2 gate dielectrics. The -IGZO has been reco...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24666885079451811461 |