Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS

碩士 === 國立交通大學 === 電子工程學系電子研究所 === 101 === A monolithic accelerometer and magnetometer with integrated capacitance to voltage readout circuit in 0.18um CMOS MEMS process is proposed. The sensing range of the combo sensor is ±5g and ±70µT. The variation of the capacitance is ±4.5fF and ±0.63fF. The s...

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Bibliographic Details
Main Authors:	Tien, Chu-Chien, 田居正
Other Authors:	Wen, Kuei-Ann
Format:	Others
Language:	en_US
Published:	2013
Online Access:	http://ndltd.ncl.edu.tw/handle/28378763012686999772

id	ndltd-TW-101NCTU5428195
record_format	oai_dc
spelling	ndltd-TW-101NCTU54281952015-10-13T23:10:50Z http://ndltd.ncl.edu.tw/handle/28378763012686999772 Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS 單晶磁力-加速度計及介面讀出電路設計 Tien, Chu-Chien 田居正碩士國立交通大學電子工程學系電子研究所 101 A monolithic accelerometer and magnetometer with integrated capacitance to voltage readout circuit in 0.18um CMOS MEMS process is proposed. The sensing range of the combo sensor is ±5g and ±70µT. The variation of the capacitance is ±4.5fF and ±0.63fF. The sensitivity of the combo is 0.9fF/g and 9aF/µT respectively. The following circuit is a capacitance to voltage readout circuit. The sensitivity of the full system is 80mV/g and 5.6mV/µT. The measurement result of the readout circuit has sensitivity of 1.3mV/aF and power consumption of 372µW. The measurement result of the magnetometer has sensitivity of 8.7nm/µT*mA. Wen, Kuei-Ann 溫瓌岸 2013 學位論文 ; thesis 59 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 電子工程學系電子研究所 === 101 === A monolithic accelerometer and magnetometer with integrated capacitance to voltage readout circuit in 0.18um CMOS MEMS process is proposed. The sensing range of the combo sensor is ±5g and ±70µT. The variation of the capacitance is ±4.5fF and ±0.63fF. The sensitivity of the combo is 0.9fF/g and 9aF/µT respectively. The following circuit is a capacitance to voltage readout circuit. The sensitivity of the full system is 80mV/g and 5.6mV/µT. The measurement result of the readout circuit has sensitivity of 1.3mV/aF and power consumption of 372µW. The measurement result of the magnetometer has sensitivity of 8.7nm/µT*mA.
author2	Wen, Kuei-Ann
author_facet	Wen, Kuei-Ann Tien, Chu-Chien 田居正
author	Tien, Chu-Chien 田居正
spellingShingle	Tien, Chu-Chien 田居正 Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS
author_sort	Tien, Chu-Chien
title	Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS
title_short	Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS
title_full	Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS
title_fullStr	Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS
title_full_unstemmed	Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS
title_sort	implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard cmos
publishDate	2013
url	http://ndltd.ncl.edu.tw/handle/28378763012686999772
work_keys_str_mv	AT tienchuchien implementationofmonolithicmagnetometerandaccelerometercombosensorwithreadoutcircuitonstandardcmos AT tiánjūzhèng implementationofmonolithicmagnetometerandaccelerometercombosensorwithreadoutcircuitonstandardcmos AT tienchuchien dānjīngcílìjiāsùdùjìjíjièmiàndúchūdiànlùshèjì AT tiánjūzhèng dānjīngcílìjiāsùdùjìjíjièmiàndúchūdiànlùshèjì
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Implementation of monolithic magnetometer and accelerometer combo sensor with readout circuit on standard CMOS

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