HKMG MOSFET Random Telegraph Signals (RTS): Experiment, Modeling, and TCAD Simulation
碩士 === 國立交通大學 === 電子研究所 === 101 === Due to the request for smaller, faster, and more efficient metal-oxide-semiconductor field-effect transistors (MOSFETs), down-scaling has become a current trend of device development. As the dimensions of device are scaled, random telegraph signals (RTS) play...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55758865737674849173 |