A Study on the Device Characteristics of Polycrystalline Silicon FinFETs Fabricated with Double Patterning Technique
碩士 === 國立交通大學 === 電子研究所 === 101 === In this thesis, we have developed a novel method which employs an I-line stepper and double patterning (DP) technique to fabricate p-channel poly-Si FinFETs for the first time. This novel DP technique is capable of not only generating fin widths (Wfin) and gat...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/58048017007639236268 |