Improvement of Breakdown Voltage and Device Reliability of AlGaN/GaN HEMTs with Integrated Slant-Gate
碩士 === 國立交通大學 === 照明與能源光電研究所 === 101 === AlGaN/GaN HEMTs have been widely investigated and demonstrated for its capability for high-frequency with power applications. For breakdown voltage improvement, field plate structures are generally used in GaN power HEMTs. Through a well design of device conf...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/e546n8 |