Growth of AlGaN/GaN HEMT Structure on Sapphire Substrate for High Power Applications by MOCVD
碩士 === 國立交通大學 === 照明與能源光電研究所 === 101 === GaN-based high electron mobility transistors (HEMTs) have great potential for high power applications due to its capability to handle large device current and large breakdown voltage. However, it is also well known that GaN film grown on sapphire using con...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89211539011943150602 |