The Study of InGaP Material Growth on GaAs and Ge/Si Substrates for III-V Solar Cells Application
碩士 === 國立交通大學 === 照明與能源光電研究所 === 101 === Si substrates as an alternative template, which is used in place of expensive and traditional Ge substrates, will become important trend for the development of low-cost and high-conversion efficiency III-V solar cells. The interface of InGaP epitaxy grown on...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22616308093900993916 |