Growth and characterization of polar/semipolar InN epilayers by metal-organic molecular beam epitaxy
博士 === 國立交通大學 === 材料科學與工程學系所 === 101 === Indium nitride is a III-V semiconductor which is potential for optoelectronics and electronics application due to its high electron mobility, high peak drift velocity, low effective electron mass and narrow bandgap of 0.65 ~0.7 eV. InN has been grown using m...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/91764020268979650592 |