| Summary: | 碩士 === 國立交通大學 === 材料科學與工程學系 === 101 === This work examines low-k silicon carbonitride (SiCxNy) films properties as Cu diffusion barrier. Low-k silicon carbonitride (SiCxNy) films with dielectric constant of 2.9–3.6 were prepared by RF (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) at 25 to 300oC under low power density of 0.3 W/cm2, using a single source precursor, N-methyl-aza-2,2,4-trimethylsilacyclopentane (MTSCP). The cross-linked structure could be formed on the emergence of Si-N-Si and Si-CH2-Si features, and features enhanced with increasing temperature. Density also rose from 1.79 to 1.92 g/cm3. The leakage current density was reduced from 1.70毕10-7 to 3.50毕10-9 A/cm2 at 1 MV/cm, upon increasing the deposition temperature from 25oC to 300oC. The conduction mechanism of the SiCxNy films all exhibited Schottky emission due to few charged defects by using a single precursor and lower plasma power density of 0.3 W/cm2. And all films showed a good breakdown strength >2.5 MV/cm. Moreover, these films displayed outstanding Cu diffusion depth, 13 to 20 nm after 400oC /4hrs annealing and the highest elastic modulus of 16.7 GPa.
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