Low-k SiCxNy Films Prepared by Plasma- Enhanced Chemical Vapor Deposition Using Methyl-aza-2,2,4 Trimethylsilacyclopentane Precursor
碩士 === 國立交通大學 === 材料科學與工程學系 === 101 === This work examines low-k silicon carbonitride (SiCxNy) films properties as Cu diffusion barrier. Low-k silicon carbonitride (SiCxNy) films with dielectric constant of 2.9–3.6 were prepared by RF (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) at...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75805007425104123599 |