Charge-Trapping Characteristics of Non-volatile Memory Using HfON Trapping Layer and HfO2/SiO2 Barriers
碩士 === 國立交通大學 === 光電系統研究所 === 101 === With the developments of consumer and portable electronic devices, such as cellular phones, cameras memory cards, the nonvolatile memory (NVM) market grows rapidly recently. The NVM devices with high density, fast program/erase speed, good endurance and data ret...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05290221402959471894 |