The Study of High-k Composite Dielectric for InGaAs MOS Device Applications
碩士 === 國立交通大學 === 光電系統研究所 === 101 === III-V metal-oxide-semiconductor field effect transistors (MOSFETs) have been widely investigated in recent years. InXGa1-XAs material has high electron mobility and the InXGa1-XAs based devices have lower turn on voltage than conventional Si devices. Therefore,...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/583ak6 |