Fabrication and Characterization of Stacked HfO2/ZnO nanorod Resistive Switching Memory
碩士 === 國立暨南國際大學 === 電機工程學系 === 101 === The resistive switching random access memory (RRAM) has the advantages of low power consumption, fast switching speed, satisfactory switching endurance, high density, and simple structure., and has become one of the promising candidates for next generation new...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20755079261550195536 |