Ion Implantation Technology Applied to GaN-based Photodetectors
碩士 === 國立成功大學 === 光電科學與工程學系 === 101 === In this study, selective-area ion implantation and selective-area regrowth techniques were applied to the fabrication of GaN-based p-i-n UV photodetectors. The selective-area growth could be attributed to the initial nucleation of GaN on the implantation-fre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66728520348228313170 |