Investigation of Activation and Re-crystallization of Ultra-shallow Junctions by Low Temperature Microwave Annealing

碩士 === 國立成功大學 === 電機工程學系碩博士班 === 101 === As gate length decreases, extension junction depth must also scale. In order to achieve ultra-shallow junction (USJ), low energy ion implantation and low temperature microwave annealing were used in this study. In this study, microwave annealing (MWA) and fem...

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Bibliographic Details
Main Authors: YenLi, 李彥
Other Authors: Wen-Hsi Lee
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/34941031387488545282