| Summary: | 碩士 === 國立成功大學 === 電機工程學系碩博士班 === 101 === In this thesis, a low-pressure radio-frequency plasma power supply is analyzed and implemented. The plasma power system consists of three stages, including the first stage of a boost power factor correction (PFC) circuit, the second stage of asymmetrical half-bridge(ASHB) DC-DC converter, and the third stage is Class-E inverter. The PFC circuit achieves high power factor and provides DC bus voltage for the secondary stage. The asymmetrical half-bridge converter in the second stage converts the bus voltage into controllable DC voltage. By adjusting the DC output voltage of the asymmetrical half-bridge converter, the plasma power can be controlled. Class-E inverter converts DC voltage into 13.56 MHz AC radio frequency power to the load.
The design of the wide output voltage range asymmetrical half-bridge converter is presented, and the ZVS Class-E inverter is analyzed. The phase angle between the resonant current and the input voltage of resonant tank is analyzed, so lower current stress is realized to reduce the conduction loss from power switch and device. The hardware prototype is first tested with a plasma equivalent load in a output power range of 30 W~300 W, then the system is applied to a reactive ion etcher (RIE) plasma chamber to verify that system is feasible for low pressure plasma reactors.
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