Application of metal silicide thin film to electrode of photodetectors
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 101 === This thesis reported on the application of metal silicide thin film to electrode of photodectors. The relationship between the phase transitions and sheet resistance of metal silicide films, nickel silicide and ytterbium silicide, were discussed. The sheet re...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92573296750750005274 |
| Summary: | 碩士 === 國立成功大學 === 電機工程學系碩博士班 === 101 === This thesis reported on the application of metal silicide thin film to electrode of photodectors. The relationship between the phase transitions and sheet resistance of metal silicide films, nickel silicide and ytterbium silicide, were discussed. The sheet resistance of metal silicide with poly silicon as a sacrificial layer was lower than amorphous silicon due to the grain size increasing. The SiNx film as a field insulator layer had lager compress stress than SiO2 film. The compress stress suppressed the phase transition of metal silicide thin films and improved the thermal stability, resulting a low sheet resistance. The device characteristics of the thin film transistors (TFT) photodetector with YbSi electrode was better than NiSi electrode owing to low Schottky barrier height. The lowest sheet resistance of NiSi and YbSi films were annealed by rapid thermal annealing at 500℃ and 600℃. Si nanocrystal embedded in the activeT Schottky barrier height. The lowest sh photocurrent (510nm) owing to quantum confinement effect and the surface state effect.
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