Infulence of Source/Drain Contact Structure on the Performance of InGaZnO Thin-Film Transistors with Gate Dielectric
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 101 === Indium gallium zinc oxide (IGZO) thin-film-transistors (TFTs) with excellent film uniformity, high carrier mobility and high transparency have shown high potential for applications of active matrix arrays for future display. However, in the operation of n-t...
Main Authors: | Jun-WeiDu, 杜浚瑋 |
---|---|
Other Authors: | Shui-Jinn Wang |
Format: | Others |
Language: | zh-TW |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/11417823107914105865 |
Similar Items
-
Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric
by: Qian, Lingxuan, et al.
Published: (2014) -
Investigation of Metal-Oxide InGaZnO Thin Film Transistors Using Stacked Gate Dielectrics and Dual Channels
by: Hsu, Hsiao-Hsuan, et al.
Published: (2014) -
The Fabrication and Characterization of InGaZnO Thin-FilmTransistors Using HfSiO High-k Gate Dielectrics
by: Hau-YuanHuang, et al.
Published: (2010) -
A Study of Effect of Drain Parasitic Field Plate on Amorphous InGaZnO Thin-Film Transistor
by: HUANG, PO-HAO, et al.
Published: (2018) -
Improving Source/Drain Contact Resistance and Electronic Properties of InGaZnO Thin-Film Transistors Using a ZnO-based Buffer Layer
by: ChiehLin, et al.
Published: (2015)